Multilayer silicon over insulator device

Details Multilayer silicon over insulator device Multilayer silicon over insulator device

2011-01-04

2011-01-04

Blum, David S (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S168000, C438S187000, C438S198000, C438S412000, C257SE21320, C257SE27112, C257SE29273

Reexamination Certificate

active

07863117

ABSTRACT:
An apparatus and method for a multilayer silicon over insulator (SOI) device is provided. In the multilayer SOI device, the crystal orientation of at least one active region of a device is different than the active region of at least another device. Where the multilayer SOI device has a first layer including a PMOS device with a silicon active region having a crystal orientation of [100], the second layer may be an NMOS device with a active region having a silicon layer having a crystal orientation of [110]. The second layer is bonded to the first layer. The method and apparatus can be extended to more than two layers thus forming a multilayer SOI device having a different crystal orientation at each layer. The multiple layer SOI device may form circuits of reduced surface area.

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