Multilayer quadruple gate field effect transistor structure for

Details Multilayer quadruple gate field effect transistor structure for Multilayer quadruple gate field effect transistor structure for

1997-04-21

1999-08-10

Chaudhuri, Olik

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257618, 257777, H01L 2701

Patent

active

059362804

ABSTRACT:
A quadruple gate field effect transistor (FET) is provided on the semiconductor-on-insulator or semiconductor-on-insulator (SOI) structure or a bulk semiconductor structure. The silicon substrate is surrounded by a polysilicon material on at least three sides to form a gate. Additionally, the substrate can be surrounded by a fourth side to form a quadruple gate structure. The SOI structure can be comprised of two layers of SOI structures. Interlayer vias can be provided to connect each layer of the two-layer structure.

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