Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-10-24
2006-10-24
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S213000, C257S288000, C257SE29158, C257SE29159, C257SE29160
Reexamination Certificate
active
07126199
ABSTRACT:
A complementary metal oxide semiconductor integrated circuit may be formed with NMOS and PMOS transistors that have high dielectric constant gate dielectric material over a semiconductor substrate. A metal barrier layer may be formed over the gate dielectric. A workfunction setting metal layer is formed over the metal barrier layer and a cap metal layer is formed over the workfunction setting metal layer.
REFERENCES:
patent: 5134083 (1992-07-01), Matthews
patent: 5424246 (1995-06-01), Matsuo et al.
patent: 6159782 (2000-12-01), Xiang et al.
patent: 6240199 (2001-05-01), Manchanda et al.
patent: 6271132 (2001-08-01), Xiang et al.
patent: 6291282 (2001-09-01), Wilk et al.
patent: 6511911 (2003-01-01), Besser et al.
patent: 6696345 (2004-02-01), Chau et al.
patent: 6713846 (2004-03-01), Senzaki
patent: 6784472 (2004-08-01), Iriyama et al.
patent: 2002/0163012 (2002-11-01), Nihei et al.
patent: 2003/0080387 (2003-05-01), Cho et al.
patent: 2003/0119292 (2003-06-01), Lee et al.
patent: 2004/0002202 (2004-01-01), Horsky et al.
patent: 2004/0084734 (2004-05-01), Matsuo
patent: 2004/0171222 (2004-09-01), Gao et al.
patent: WO 01/97257 (2001-12-01), None
“CRC Handbook of Chemistry and Physics,” ed. David Lide, 2000, CRC Press, 81st edition, p. 12-130.
Barns Chris
Brask Justin K.
Chau Robert S.
Datta Suman
Doczy Mark L.
Flynn Nathan J.
Intel Corporation
Quinto Kevin
Trop Pruner & Hu P.C.
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