Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2006-08-29
2006-08-29
Dang, Phuc (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S052000
Reexamination Certificate
active
07098476
ABSTRACT:
A novel air-gap-containing interconnect wiring structure is described incorporating a solid low-k dielectric in the via levels, and a composite solid plus air-gap dielectric in the wiring levels. Also provided is a method for forming such an interconnect structure. The method is readily scalable to interconnect structures containing multiple wiring levels, and is compatible with Dual Damascene Back End of the Line (BEOL) processing.
REFERENCES:
patent: 5686734 (1997-11-01), Hamakawa et al.
patent: 5798559 (1998-08-01), Bothra et al.
patent: 5998293 (1999-12-01), Dawson et al.
patent: 6030904 (2000-02-01), Grill et al.
patent: 6054379 (2000-04-01), Yau et al.
patent: 6064118 (2000-05-01), Sasaki
patent: 6100184 (2000-08-01), Zhao et al.
patent: 6140226 (2000-10-01), Grill et al.
patent: 6218282 (2001-04-01), Buynoski
patent: 6423384 (2002-07-01), Khazeni et al.
patent: 6495445 (2002-12-01), Clevenger et al.
patent: 6514878 (2003-02-01), Watatani
patent: 6566757 (2003-05-01), Banerjee et al.
Babich Katherina E.
Carruthers Roy Arthur
Dalton Timothy Joseph
Grill Alfred
Hedrick Jeffrey Curtis
Calvin Lee
Dang Phuc
International Business Machines - Corporation
Scully , Scott, Murphy & Presser, P.C.
Trepp, Esq. Robert M.
LandOfFree
Multilayer interconnect structure containing air gaps and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Multilayer interconnect structure containing air gaps and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Multilayer interconnect structure containing air gaps and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3671072