Multilayer hardmask scheme for damage-free dual damascene...

Details Multilayer hardmask scheme for damage-free dual damascene... Multilayer hardmask scheme for damage-free dual damascene...

2008-05-13

2008-05-13

Lavilla, Michael E. (Department: 1794)

Stock material or miscellaneous articles

Composite

Of silicon containing

C428S428000, C428S448000, C428S450000, C428S451000, C428S627000, C428S632000

Reexamination Certificate

active

11034480

ABSTRACT:
Interconnect structures possessing an organosilicate glass based material for 90 nm and beyond BEOL technologies in which a multilayer hardmask using a line-first approach are described. The interconnect structure of the invention achieves respective improved device/interconnect performance and affords a substantial dual damascene process window owing to the non-exposure of the OSG material to resist removal plasmas and because of the alternating inorganic/organic multilayer hardmask stack. The latter feature implies that for every inorganic layer that is being etched during a specific etch step, the corresponding pattern transfer layer in the field is organic and vice-versa.

REFERENCES:
patent: 6140226 (2000-10-01), Grill et al.
patent: 6720249 (2004-04-01), Dalton et al.
patent: 6797552 (2004-09-01), Chang et al.
patent: 7033960 (2006-04-01), You et al.
patent: 7109101 (2006-09-01), Wright et al.
patent: 7115993 (2006-10-01), Wetzel et al.
patent: 2004/0061227 (2004-04-01), Gao et al.

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