X-ray or gamma ray systems or devices – Specific application – Diffraction – reflection – or scattering analysis
Reexamination Certificate
2007-04-10
2007-04-10
Glick, Edward J. (Department: 2882)
X-ray or gamma ray systems or devices
Specific application
Diffraction, reflection, or scattering analysis
C378S034000
Reexamination Certificate
active
11272610
ABSTRACT:
The present invention makes it possible to obtain a multilayer film reflective mirror61comprising a first multilayer film67which is formed by alternately laminating Mo layers671and Si layers673on a substrate63, and a second multilayer film65which is formed on top of the first multilayer film67, and which is formed by alternately laminating Mo layers651and Si layers653, wherein the thickness of the Mo layers in the first multilayer film is substantially equal to or smaller than the thickness of the Mo layers in the second multilayer film, and the ratio of the thickness of the Mo layers to the thickness of the Si layers in the first multilayer film is different from the ratio of these thicknesses in the second multilayer film. As a result, a multilayer film reflective mirror with a low internal stress in which a drop in the reflectivity is suppressed can be obtained.
REFERENCES:
patent: 6011646 (2000-01-01), Mirkarimi et al.
patent: 6134049 (2000-10-01), Spiller et al.
patent: 2002/0171817 (2002-11-01), Banonneau et al.
patent: 2002/0171922 (2002-11-01), Shiraishi et al.
patent: 2003/0031938 (2003-02-01), Singh et al.
patent: 5-346496 (1993-12-01), None
patent: 2002-329649 (2002-11-01), None
D. A. Tichenor et al, “Recent results in the development of an intergrated EUVL laboratory tool”,SPIE, vol. 2437, pp. 292-307 (1995).
C. Montcalm, “Multilayer reflective coatings for extreme-ultraviolet lithography”SPIE, vol. 3331, pp. 42-51 (19998).
E. Zoethout et al, “Street Mitigation in Mo/Si Multilayers for EUV Lithography”,Proceedings of SPIE, vol. 5037, pp. 872-878 (2003).
M. Shiraishi et al, “Mo/Si multilayers deposited by low-pressure rotary magnet cathode sputtering for extreme ultraviolet lithography”,Proceedings of SPIE, vol. 5037, pp. 249-256 (2003).
Frishauf Holtz Goodman & Chick P.C.
Nikon Corporation
Song Hoon
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