Static information storage and retrieval – Systems using particular element – Ferroelectric
Reexamination Certificate
2009-01-30
2010-10-26
Nguyen, Viet Q (Department: 2827)
Static information storage and retrieval
Systems using particular element
Ferroelectric
C365S117000, C365S173000, C365S171000, C257S295000, C257S752000
Reexamination Certificate
active
07821808
ABSTRACT:
A data storage system comprises first and second storage layers, a reader and a writer. The first storage layer has a first coercive potential and a first polarization. The second storage layer has a second coercive potential that is less than the first coercive potential, and a second polarization that is coupled to the first polarization. The writer performs a write operation in which a write potential is imposed across the first and second storage layers, such that the first coercive potential is exceeded across the first storage layer and the second coercive potential is exceeded across the second storage layer. The reader performs a read operation in which a read potential is imposed across the first and second storage layers, such that the second coercive potential is exceeded across the second storage layer and the first coercive potential is not exceeded across the first storage layer.
REFERENCES:
patent: 5146299 (1992-09-01), Lampe et al.
patent: 5343421 (1994-08-01), Brennan
patent: 5530667 (1996-06-01), Omura et al.
patent: 5729488 (1998-03-01), Drab et al.
patent: 6064587 (2000-05-01), Jo
patent: 6069820 (2000-05-01), Inomata et al.
patent: 6151240 (2000-11-01), Suzuki
patent: 6344991 (2002-02-01), Mikami et al.
patent: 6498362 (2002-12-01), Forbes et al.
patent: 6522571 (2003-02-01), Salling
patent: 6574134 (2003-06-01), Chen et al.
patent: 6580632 (2003-06-01), Shimada et al.
patent: 6683803 (2004-01-01), Gudesen et al.
patent: 6815223 (2004-11-01), Celinska et al.
patent: 6952362 (2005-10-01), Forbes
patent: 7020005 (2006-03-01), Karlsson et al.
patent: 7098496 (2006-08-01), Li et al.
patent: 7291878 (2007-11-01), Stipe
patent: 7391706 (2008-06-01), Nauka et al.
patent: 7406020 (2008-07-01), Hong et al.
patent: 2006/0023606 (2006-02-01), Lutwyche et al.
patent: 2006/0239060 (2006-10-01), Shimada
patent: 2010/0110754 (2010-05-01), Hu et al.
Wu, Jiagang et al., Double hysteresis loop in (Pb0.90La0.10)Ti0.975O3/Pb(Zr0.20Ti0.80)O3 bilayer thin films, Applied Physics Letters, 91, 212905, Nov. 21, 2007, pp. 1-3.
Misirlioglu, I.B. et al., Space charge contribution to the apparent enhancement of polarization in ferroelectric bilayers and multilayers, Applied Physics Letters, 91, 022911, Jul. 11, 2007, pp. 1-3.
Akcay, G. et al., Strain induced internal potentials of compositionally graded epitaxial ferroelectric thin films, Applied Physics Letters, 91, 021904, Jul. 3, 2007, pp. 1-3.
Ranjith, R. et al., Interfacial coupling and its size dependence in PbTiO3 and PbMg1/3Nb2/3)3 multilayers, Physical Review B, 74, 184104, Nov. 6, 2006, pp. 1-10.
Roytburd, A.L. et al., Dielectric anomaly due to electrostatic coupling in ferroelectric-paralectric bilayers and multilayers, Applied Physics Letters, 87, 092902, Aug. 22, 2005, pp. 1-3.
Wu, Yin-Zhong et al., Hysteresis loop of a ferroelectric bilayer with an antiferroelectric interfacial coupling, Journal of Applied Physics, vol. 91, No. 3, Feb. 1, 2002, pp. 1482-1486.
Chew, Khian-Hooi et al., Hysteresis loops of ferroelectric bilayers and superlattices, Applied Physics Letters, vol. 77, No. 17, Oct. 23, 2000, pp. 2755-2757.
Ahner Joachim
Forrester Martin Gerard
Zavaliche Florin
Zhao Tong
Kinney & Lange , P.A.
Nguyen Viet Q
Seagate Technology LLC
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