Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Insulating material
Reexamination Certificate
2006-01-17
2006-01-17
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Insulating material
C257S700000, C257S758000
Reexamination Certificate
active
06987316
ABSTRACT:
A multilayer ceramic substrate in which an outer metal pad is anchored to the substrate by a single metal-filled via in the first ceramic layer adjacent to the metal pad. In turn, this single metal-filled via is anchored to the substrate by a larger, single metal-filled via in the next ceramic layer adjacent to the first ceramic layer. Preferably, the metal-filled vias and metal pad are 100 volume percent metal.
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Farooq Mukta G.
Prettyman Kevin M.
Reddy Srinivasa N.
Blecker Ira D.
Ho Tu-Tu
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