Multilayer build-up wiring board including a chip mount region

Details Multilayer build-up wiring board including a chip mount region Multilayer build-up wiring board including a chip mount region

2009-03-17

2010-12-07

Landau, Matthew C (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

With housing or external electrode

C257S418000, C257S778000, C361S719000, C361S720000

Reexamination Certificate

active

07847318

ABSTRACT:
Mesh holes35aand59aof upper solid layers35and upper solid layers59are formed to overlie on one another, so that the insulating properties of interlayer resin insulating layers50are not lowered. Here, the diameter of each mesh hole is preferably 75 to 300 μm. The reason is as follows. If the diameter of the mesh hole is less than 75 μm, it is difficult to overlay the upper and lower mesh holes on one another. If the diameter exceeds 300 μm, the insulating properties of the interlayer resin insulating layers deteriorate. In addition, the distance between the mesh holes is preferably 100 to 2000 μm. The reason is as follows. If the distance is less than 100 μm, the solid layer cannot function. If the distance exceeds 2000 μm, the deterioration of the insulating properties of the interlayer resin insulating film occurs.

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