Multifrequency plasma reactor

Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – Having glow discharge electrode gas energizing means

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C156S345430, C156S345440, C118S7230ER, C315S111210

Reexamination Certificate

active

07625460

ABSTRACT:
A multifrequency plasma reactor includes first, second and third power generators operably coupled to at least one of an upper and lower electrode for generating power signals. The plasma reactor further includes a controller for selectively activating the power generators according to an activation profile that results in the formation of a desirable narrow gap via in a semiconductor wafer. A method of generating a plasma in the reactor for etching the semiconductor wafer is also described by way of configuring the power generators according to various activation configurations during various phases of the etching process.

REFERENCES:
patent: 4585516 (1986-04-01), Corn et al.
patent: 5597438 (1997-01-01), Grewal et al.
patent: 5656123 (1997-08-01), Salimian et al.
patent: 5716534 (1998-02-01), Tsuchiya et al.
patent: 5948215 (1999-09-01), Lantsman
patent: 6043607 (2000-03-01), Roderick
patent: 6089181 (2000-07-01), Suemasa et al.
patent: 6095084 (2000-08-01), Shamouilian et al.
patent: 6235646 (2001-05-01), Sharan et al.
patent: 6309978 (2001-10-01), Donohoe et al.
patent: 6491978 (2002-12-01), Kalyanam
patent: 6492280 (2002-12-01), DeOrnellas et al.
patent: 6533894 (2003-03-01), Sharan et al.
patent: 6756311 (2004-06-01), Suzuki
patent: 6849154 (2005-02-01), Nagahata et al.
patent: 2001/0009139 (2001-07-01), Shan et al.
patent: 2002/0139665 (2002-10-01), DeOrnellas et al.
patent: 2004/0025791 (2004-02-01), Chen et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Multifrequency plasma reactor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Multifrequency plasma reactor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Multifrequency plasma reactor will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4060201

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.