Multifinger-type electrostatic discharge protection element

Details Multifinger-type electrostatic discharge protection element Multifinger-type electrostatic discharge protection element

2006-08-29

2006-08-29

Tran, Thien F. (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S356000, C257S358000, C257S360000

Reexamination Certificate

active

07098510

ABSTRACT:
A multifinger ESD protection element has between an input wiring to which a surge current is input and a reference-potential wiring, 2n-number (where n is a natural number of 2 or greater) of fingers F1to F2n. A drain resistor Rdi(i=1 to 2n), NMOS transistor Tiand source resistor Rsiare connected serially in each finger Fiin the order mentioned. A single unit Ujis constructed by two mutually adjacent fingers F2j−1and F2j(where j is a natural number of 1 to n). In each unit the source of one transistor is connected to the gate of the other transistor and the source of this other transistor is connected to the gate of the first-mentioned transistor. The source S2jof finger F2jis connected to the source S2j+1of the next unit Un+1. The 2n-number of fingers are connected in the form of a ring.

REFERENCES:
patent: 5450267 (1995-09-01), Diaz et al.
patent: 6583972 (2003-06-01), Verhaege et al.
patent: 2002/0033507 (2002-03-01), Verhaege et al.
patent: 8-24183 (1996-03-01), None
patent: 3157614 (2001-02-01), None
Tong Li, Ching-Han Tsai, Elyse Rosenbaum and Sung-Mo Kang, “Substrate resistance modeling and circuit-level stimulation of parasitic device coupling effects for CMOS I/O circuits under ESD stress”, Electrical Overstress/Electrostatic Discharge Symposium Proceedings, 1998, Oct. 6-8, 1998, pp. 281-289.
Barth, J. et al, “TLP calibration, correlation, standards, and new techniques [ESD test]”, Electrical Overstress/Electrostatic Discharge 'Symosium Proceedings 2000, 2000 pp. 85-96.
Christian Russ, Karlheiz Bock, et al., “Non-Uniform Triggering of gg-nMOS Investigated by Combined Emission Microscopy and Transmission Line Pulsing”, Electrical Overstress/Electrostatic Discharge Symposium Proceedings, 1998 pp. 177-186.
Kwang-hoon Oh, et al., Non-Uniform Bipolar Conduction in Single Finger NMOS Transistors and Implications for Deep Submicron ESD Design, IEEE 01CH37167.39thAnnual International Reliability Ph7ysics Symposium, Orlando Florida, 2001 pp. 226-234.

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