Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With electrical contact in hole in semiconductor
Reexamination Certificate
2007-10-31
2010-11-09
Graybill, David E (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
With electrical contact in hole in semiconductor
C257S777000, C257S686000, C257S723000, C257S737000, C257S738000, C257S758000, C257S774000, C257S778000, C257S780000
Reexamination Certificate
active
07829975
ABSTRACT:
A multichip semiconductor device is disclosed in which chips are stacked each of which comprises a semiconductor substrate formed on top with circuit components and an interlayer insulating film formed on the top of the semiconductor substrate. At least one of the chips has a connect plug of a metal formed in a through hole that passes through the semiconductor substrate and the interlayer insulating film. The chip with the connect plug is electrically connected with another chip by that connect plug.
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Hayasaka Nobuo
Matsuo Mie
Okumura Katsuya
Sasaki Keiichi
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Graybill David E
Kabushiki Kaisha Toshiba
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