Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1993-01-22
1993-12-28
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257773, 257777, H01L 2348, H01L 2946, H01L 2954
Patent
active
052742709
ABSTRACT:
A multichip module for interconnecting a plurality of integrated circuits. A thick layer of silicon dioxide, up to 20 .mu.m, serves as a dielectric to separate metal signal layers from power and ground planes The silicon dioxide layer is deposited to have a residual compressive stress of less than 2.times.10.sup.9 dynes/cm.sup.2, and preferably less than 1.times.10.sup.9 dynes/cm.sup.2, to prevent cracking.
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Monin, Jr. Donald L.
nCHIP, Inc.
Prenty Mark V.
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