Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Reexamination Certificate
2006-02-07
2006-02-07
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular semiconductor material
C257S102000
Reexamination Certificate
active
06995406
ABSTRACT:
In a multi-beam semiconductor laser including nitride III–V compound semiconductor layers stacked on one surface of a substrate of sapphire or other material to form laser structures, and including a plurality of anode electrodes and a plurality of cathode electrodes formed on the nitride III–V compound semiconductor layers, one of the anode electrodes is formed to bridge over one of the cathode electrodes via an insulating film, and another anode electrode is formed to bridge over another of the cathode electrodes via an insulating film.
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Ansai Shinichi
Fujimoto Tsuyoshi
Goto Osamu
Hino Tomonori
Matsumoto Osamu
Nelms David
Nguyen Thinh T
Trexler, Bushnell Giangiorgi, Blackstone & Marr, Ltd.
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