Multi-valued semiconductor memory device

Details Multi-valued semiconductor memory device Multi-valued semiconductor memory device

1995-12-21

1997-03-11

Nelms, David C.

Static information storage and retrieval

Systems using particular element

Capacitors

365207, 365210, G11C 1124

Patent

active

056108559

ABSTRACT:
In order to provide a multi-valued DRAM with an access time comparable to ordinary binary DRAMs, a potential difference generated by a memory cell between a pair of bit-lines is delivered to N-1 sets of sense amplifiers. Each delivered potential difference is shifted by a predetermined value for each sense amplifier for classifying the potential difference into N levels. A refreshing potential for the memory cell is obtained from outputs of the sense amplifiers activated with sense amplifier activating signals having potentials predetermined for each sense amplifier.

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