Multi-valued memory cell using bidirectional resonant tunneling

Details Multi-valued memory cell using bidirectional resonant tunneling Multi-valued memory cell using bidirectional resonant tunneling

1992-04-21

1993-11-30

LaRoche, Eugene R.

Static information storage and retrieval

Systems using particular element

Ternary

365 71, 365 72, 365175, G11C 506, G11C 1156

Patent

active

052671933

ABSTRACT:
A memory cell for multi-valued logic utilizing bidirectional folding V-I characteristics. Two devices with bidirectional multiple folding characteristics, such as the V-I characteristics of resonant tunneling diodes, are connected in series across a power supply. Multiple stable operating points are established where the positive resistance portions the folding characteristics interesect and can be used to store multiple levels of signal. With bidirectional folding characteristics, the number of operating points can be doubled by using both a positive power supply and a negative power supply. The signal can be written in and read out at the connecting point of the two devices.

REFERENCES:
patent: 3641516 (1972-02-01), Castrucci et al.
patent: 4396999 (1983-08-01), Malaviya
patent: 4573143 (1986-02-01), Matsukawa
patent: 4646266 (1987-02-01), Ovshinsky et al.
patent: 5128894 (1992-07-01), Lin

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