Multi-valued mask ROM

Details Multi-valued mask ROM Multi-valued mask ROM

2011-06-14

2011-06-14

Mandala, Victor (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE21004, C257SE27016, C257SE29300, C365S185140, C365S154000

Reexamination Certificate

active

07960777

ABSTRACT:
A mask ROM is provided with a plurality of memory cells each including first and second nodes, and a transistor having a source and drain connected to the first and second nodes, respectively. A first memory cell out of the plurality of memory cells further includes a first resistive interconnection which provides an electrical connection between the first and second nodes. The resistance of the first resistive interconnection is adjusted depending on data stored onto the first memory cell.

REFERENCES:
patent: 2006/0054953 (2006-03-01), Son et al.
patent: 9-232449 (1997-09-01), None
patent: 10-22481 (1998-01-01), None

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