Multi-value memory cell using resonant tunnelling diodes

Details Multi-value memory cell using resonant tunnelling diodes Multi-value memory cell using resonant tunnelling diodes

1990-09-28

1992-07-07

Popek, Joseph A.

Static information storage and retrieval

Systems using particular element

Ternary

365 71, 365 72, 365175, G11C 506, G11C 1156, G11C 1136

Patent

active

051288940

ABSTRACT:
A memory cell for multi-value logic. Two devices with multiple peak folding characteristics, such as the V-I characteristics of resonant tunneling diodes, are connected in series across a power supply. Multiple stable operating points are established where the positive resistance portions of the respective folding voltage-current characteristics intersect and correspond to multiple quantized levels for storing information, creating a multi-valued memory cell.

REFERENCES:
patent: 3120653 (1964-02-01), Miller et al.
patent: 3996484 (1976-12-01), Abraham
patent: 4573143 (1986-02-01), Matsukawa
patent: 4853753 (1989-08-01), Capasso et al.
patent: 4907045 (1990-03-01), Ando
patent: 4956681 (1990-10-01), Yokoyama et al.
Signal Processing with Vertically-Integrated Resonant Tunneling Diodes, 1990 International Symposium on Circuits and Systems, Robert C. Potter et al. pp. 2557-2561.
IRE Transactions on Electronic Computers, Esaki Diode High-Speed Logical Circuits, E. Goto, et al., Mar. 1960, pp. 25 and 29

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