Multi-value magnetic random access memory with stacked...

Details Multi-value magnetic random access memory with stacked... Multi-value magnetic random access memory with stacked...

2006-05-09

2006-05-09

Tran, Andrew Q. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Three-dimensional magnetic array

C365S133000, C365S158000, C365S173000, C365S171000, C365S051000, C365S066000, C365S209000

Reexamination Certificate

active

07042753

ABSTRACT:
A memory cell is constituted by a TMR element and a MOS transistor. The source diffusion layer of the MOS transistor is connected to a source line and the drain diffusion layer of the transistor is connected to a TMR element via a local interconnection wire. The TMR element is held between the local interconnection wire and a bit line. The TMR element is constituted by stacked TMR layers. Each TMR layer is able to have two states, that is, a state in which spin directions are parallel and anti-parallel. Therefore, the TMR element stores four-value data. A current-driving line is set immediately below the TMR element.

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U.S. Appl. No. 10/073,339, filed Feb. 13, 2002, Pending.

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