Multi-time programmable semiconductor memory device and...

Details Multi-time programmable semiconductor memory device and... Multi-time programmable semiconductor memory device and...

2007-06-05

2007-06-05

Tran, Andrew Q. (Department: 2824)

Static information storage and retrieval

Read/write circuit

Having fuse element

C365S230030, C365S230060, C365S189080, C365S189110, C365S096000

Reexamination Certificate

active

11316421

ABSTRACT:
A multi-time programmable semiconductor memory device includes a unit array, a unit decoder and a cell distribution circuit. The unit array includes a plurality of programmable units, each of which has a plurality of one-time programmable cells. The unit decoder generates a unit select signal for selecting a programmable unit of the unit array based on an address signal. The cell distribution circuit generates an odd-numbered cell programming signal for programming one of odd-numbered one-time programmable cells of the plurality of the one-time programming cells of the programmable unit that is selected by the unit select signal, and an even-numbered cell programming signal for programming one of even-numbered one-time programmable cells of the plurality of the one-time programming cells, based on previous data state of the selected programmable unit received from the unit array, and present data state to be programmed to the selected programmable unit.

REFERENCES:
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patent: 6459633 (2002-10-01), Jeffery et al.
patent: 6477103 (2002-11-01), Nguyen et al.
patent: 7084452 (2006-08-01), Kim
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patent: 08-148000 (1996-06-01), None
patent: 2000-267846 (2000-09-01), None
English language abstract of Japanese Publication 08-148000.
English language abstract of Japanese Publication 2000-267846.

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