Multi-temperature processing

Details Multi-temperature processing Multi-temperature processing

2008-04-29

2008-04-29

Alanko, Anita (Department: 1765)

Etching a substrate: processes

Gas phase etching of substrate

With measuring, testing, or inspecting

C216S067000, C216S068000, C216S074000, C438S714000, C438S715000, C204S192320, C156S345520, C156S345530

Reissue Patent

active

RE040264

ABSTRACT:
The present invention provides a technique, including a method and apparatus, for etching a substrate in the manufacture of a device. The apparatus includes a chamber and a substrate holder disposed in the chamber. The substrate holder has a selected thermal mass to facilitate changing the temperature of the substrate to be etched during etching processes. That is, the selected thermal mass of the substrate holder allows for a change from a first temperature to a second temperature within a characteristic time period to process a film. The present technique can, for example, provide different processing temperatures during an etching process or the like.

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