Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-11-28
2006-11-28
Soward, Ida M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S266000, C257S278000, C257S330000, C257S331000, C257S317000, C257S334000, C257S496000, C257S534000, C257S600000, C257S623000, C257S798000
Reexamination Certificate
active
07141856
ABSTRACT:
Disclosed is a semiconductor fin construction useful in FinFET devices that incorporates an upper region and a lower region with wherein the upper region is formed with substantially vertical sidewalls and the lower region is formed with inclined sidewalls to produce a wider base portion. The disclosed semiconductor fin construction will also typically include a horizontal step region at the interface between the upper region and the lower region. Also disclosed are a series of methods of manufacturing semiconductor devices incorporating semiconductor fins having this dual construction and incorporating various combinations of insulating materials such as silicon dioxide and/or silicon nitride for forming shallow trench isolation (STI) structures between adjacent semiconductor fins.
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Choi Si-young
Jung In Soo
Kim Taek Jung
Lee Byeong Chan
Lee Deok Hyung
Harness Dickey & Pierce
Soward Ida M.
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