Multi-step selective etching for cross-point memory

Details Multi-step selective etching for cross-point memory Multi-step selective etching for cross-point memory

2007-07-26

2009-11-17

Smoot, Stephen W (Department: 2813)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S705000, C438S717000, C438S740000, C438S742000, C257S321000

Reexamination Certificate

active

07618894

ABSTRACT:
Multi-step selective etching. Etching an unmasked region associated with each layer of a plurality of layers, the plurality of layers comprising a stack, wherein the unmasked region of each of the plurality of layers is etched while exposed to a temperature, a pressure, a vacuum, using a plurality of etchants, wherein at least one of the plurality of etchants comprises an inert gas and oxygen, wherein the etchant oxidizes the at least one layer that can be oxidized such that the etching stops, the plurality of etchants leaving substantially unaffected a masked region associated with each layer of the plurality of layers, wherein two or more of the plurality of layers comprises a memory stack, and preventing corrosion of at least one of the plurality of layers comprising a conductive metal oxide by supplying oxygen to the stack after etching the unmasked region without breaking the vacuum.

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