Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-06-12
2007-06-12
Nguyen, Tuan H. (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S643000
Reexamination Certificate
active
10772133
ABSTRACT:
Methods for forming robust copper structures include steps for providing a substrate with an insulating layer with openings formed therein. At least two barrier layers are then formed followed by the deposition of a copper seed layer which is annealed. Bulk copper deposition of copper and planarization can follow. In one approach the seed layer is implanted with suitable materials forming an implanted seed layer upon which a bulk layer of conductive material is formed and annealed to form a final barrier layer. In another approach, a barrier layer is formed between two seed layers which forms a base for bulk copper deposition. Another method involves forming a first barrier layer and forming a copper seed layer thereon. The seed layer being implanted with a barrier material (e.g. palladium, chromium, tantalum, magnesium, and molybdenum or other suitable materials) and then bulk deposition of copper-containing material is performed followed by annealing.
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Catabay Wilbur G.
Li Ping
Wang Zhihai
Beyer & Weaver, LLP
LSI Corporation
Nguyen Tuan H.
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