Multi-step polysilicon deposition process for boron penetration

Details Multi-step polysilicon deposition process for boron penetration Multi-step polysilicon deposition process for boron penetration

1997-10-23

2000-03-28

Bowers, Charles

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Plural fluid growth steps with intervening diverse operation

257411, H01L 21265, H01L 2978

Patent

active

060431385

ABSTRACT:
The present invention provides an improved semiconductor device and method of impeding the diffusion of boron by providing at least one layer of polysilicon and an interface substance. A semiconductor device according to the present invention is comprised of a substrate; gate oxide coupled to the substrate; a layer of polysilicon coupled to the gate oxide; and an interface layer between the layer of polysilicon and the gate oxide, wherein the interface layer impedes diffusion of doping material.

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patent: 5567638 (1996-10-01), Lin et al.
Y. H. Lin et al., IEEE Electron Dev. Lett. 16(6)(1995)248, "Nitridation of . . . gate to suppress the boron penetration in PMOS" Jun.
Y. H. Lin et al. Jpn. J. Appl. Phys. 34(2b)(1995)752 "Supression of boron penetration in PMOS by using oxide . . . in gate" Feb.
Y. H. Lin et al. IEEE Trans. Electron Dev. 43(7)(1996)1161 Nitridization of the stacked poly-si gate to suppress the boron . . . Jul.
H. Fukuda et al., Jpn. J. Appl. Phys. 29(12)(1990)L2333 ". . . Nitirided SiO2 films . . . by RTP in an N2O ambient" Dec.

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