Multi-step plasma treatment method to improve CU...

Details Multi-step plasma treatment method to improve CU... Multi-step plasma treatment method to improve CU...

2006-08-22

2006-08-22

Whitehead, Jr., Carl (Department: 2813)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S720000

Reexamination Certificate

active

07094705

ABSTRACT:
A method for plasma treating an exposed copper surface and dielectric insulating layer in a semiconductor device manufacturing process including providing a semiconductor wafer having a process surface including an exposed copper portion and an exposed dielectric insulating layer portion; plasma treating in a first plasma treatment process, the process surface with a first plasma including ammonia (NH3) and nitrogen (N2) plasma to form a copper nitride layer overlying the exposed copper portion; and, plasma treating in a second plasma treatment process the process surface with a second plasma including oxygen (O2).

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