Etching a substrate: processes – Gas phase etching of substrate – Etching inorganic substrate
Patent
1996-05-17
1998-10-27
Geist, Gary
Etching a substrate: processes
Gas phase etching of substrate
Etching inorganic substrate
216 64, 216 67, 438738, C23F 100
Patent
active
058274375
ABSTRACT:
A method for etching through a selected portion of a metallization layer of a wafer's layer stack in a high density plasma processing chamber includes performing a main etch by etching at least partially through the metallization layer of the layer stack with a main-etch etchant source gas that includes essentially Cl.sub.2 and BCl.sub.3 having a first Cl.sub.2 :BCl.sub.3 flow ratio. Thereafter, an over etch is performed by etching to a layer underlying the metallization layer with an over-etch etchant source gas that includes essentially Cl.sub.2 and BCl.sub.3 having a second Cl.sub.2 :BCl.sub.3 flow ratio that is higher than the first Cl.sub.2 :BCl.sub.3 flow ratio. The method may further include the step of performing a barrier layer etching step for etching a barrier layer of the layer stack prior to performing the over etch.
REFERENCES:
patent: 5421891 (1995-06-01), Campbell
Unknown, "TCP.sup.198 9600 Maintenance," Rev. B--Jan. 15, 1995, Lam Research Corp., Fremont, CA.
Inspec 91:4023936 abst of "High density plasma etching of aluminum alloys", Bradley 1991 Proceedings 8th International IEEE VLSI Conf. pp. 298-300, 1991.
Inspec 94:4813929 abst of "Etching of aluminum alloys in the transformer-coupled plasma etcher", Yunju, Journal of Vacuum Sciencwe and Technology A, vol. 12(4), pt 1 pp. 1328-1333, 1994.
Huang Kenlin Chenjin
Yang Richard Yen-chang
Geist Gary
Lam Research Corporation
Vollano Jean F.
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