Multi-step high density plasma (HDP) process to obtain...

Details Multi-step high density plasma (HDP) process to obtain... Multi-step high density plasma (HDP) process to obtain...

2005-02-08

2005-02-08

Guerrero, Maria F. (Department: 2822)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S778000, C438S784000, C438S787000

Reexamination Certificate

active

06852649

ABSTRACT:
A method of forming an essentially uniform doped insulating layer is disclosed. Variations in a substrate temperature that may result in a dopant gradient within a doped insulating layer can be compensated for by varying a dopant supply rate in a deposition process. One particular embodiment discloses a method of forming a high density plasma phosphosilicate glass having a phosphorous concentration of 8% or greater by weight that varies by no more than about 1% by weight throughout.

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