Multi-step deposition to improve the conformality of ionized PVD

Details Multi-step deposition to improve the conformality of ionized PVD Multi-step deposition to improve the conformality of ionized PVD

1998-05-22

2000-06-20

Bowers, Charles

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438624, 438627, 438637, 438648, 438643, 438685, H01L 2144

Patent

active

060777796

ABSTRACT:
Methods are disclosed to provide a low-cost method of producing a refractory liner in submicron vias or trenches applying ionized metal plasma using physical vapor deposition (PVD). The refractory liner is deposited on the bottom and sidewalls of the submicron vias and trenches in a two step PVD, using first high pressure and then low pressure. By selecting adhesion layer and diffusion barrier materials such as tantalum, tantalum nitride or titanium nitride or alloys of these metals a uniform barrier is created which forms a suitable layer around copper metallization.

REFERENCES:
patent: 5882399 (1999-03-01), Ngan et al.

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