Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2007-06-01
2009-02-03
Ho, Hoai V (Department: 2827)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S207000, C365S210100
Reexamination Certificate
active
07486546
ABSTRACT:
The invention provides a multi-state sense amplifier, coupled to at least one memory cell with changeable resistance and a plurality of reference cells. The first current mirror circuit, coupled to the output terminal of the memory cell, generates a second memory cell current at a first node according to a first memory cell current through the memory cell. The second current mirror circuit, coupled to the output terminal of the reference cells, generates a plurality of second reference currents at a plurality of second nodes according to a plurality of first reference currents through the reference cells. The load circuit, coupled to the first node, the second nodes, and a ground, provides equal loads for the second memory cell current and the second reference currents to respectively generate a memory cell voltage at the first node and a plurality of reference voltages at the second nodes.
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Chang Chia-Pao
Lin Chih-Sheng
Su Keng-Li
Wang Min-Chuan
Birch & Stewart Kolasch & Birch, LLP
Ho Hoai V
Industrial Technology Research Institute
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