Multi-state non-volatile flash memory capable of being its own t

Details Multi-state non-volatile flash memory capable of being its own t Multi-state non-volatile flash memory capable of being its own t

1997-07-30

1999-07-27

Phan, Trong

Static information storage and retrieval

Floating gate

Multiple values

36518524, 36518533, G11C 1604

Patent

active

059301678

ABSTRACT:
A memory system including an array of flash EEPROM cells arranged in blocks of cells that are erasable together, with individual cells storing more than one bit of data as a result of operating the individual cells with more than two detectable threshold ranges or states. Any portion of the array in which data is not stored can be used as a write cache, where individual ones of the cells store a single bit of data by operating with only two detectable threshold ranges. Data coming into the memory is initially written in available blocks in two states since writing in more than two states takes significantly more time. At a later time, in the background, the cached data is read, compressed and written back into fewer blocks of the memory in multi-state for longer term storage at a reduced cost.

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