Multi-resistive state memory device with conductive oxide...

Details Multi-resistive state memory device with conductive oxide... Multi-resistive state memory device with conductive oxide...

2008-10-01

2009-12-15

Pert, Evan (Department: 2826)

Static information storage and retrieval

Systems using particular element

Resistive

Reexamination Certificate

active

07633790

ABSTRACT:
A memory cell including conductive oxide electrodes is disclosed. The memory cell includes a memory element operative to store data as a plurality of resistive states. The memory element includes a layer of a conductive metal oxide (CMO) (e.g., a perovskite) in contact with an electrode that may comprise one or more layers of material. At least one of those layers of material can be a conductive oxide (e.g., a perovskite such as LaSrCoO3—LSCoO or LaNiO3—LNO) that is in contact with the CMO. The conductive oxide layer can be selected as a seed layer operative to provide a good lattice match with and/or a lower crystallization temperature for the CMO. The conductive oxide layer may also be in contact with a metal layer (e.g., Pt). The memory cell additionally exhibits non-linear IV characteristics, which can be favorable in certain arrays, such as non-volatile two-terminal cross-point memory arrays.

REFERENCES:
patent: 2003/0003674 (2003-01-01), Hsu et al.

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