Multi-resistive state element with reactive metal

Details Multi-resistive state element with reactive metal Multi-resistive state element with reactive metal

2006-07-25

2006-07-25

Nguyen, Tuan T. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetic thin film

C365S158000

Reexamination Certificate

active

07082052

ABSTRACT:
A treated conductive element is provided. A conductive element can be treated by depositing either a reactive metal or a very thin layer of material on the conductive element. The reactive metal (or very thin layer of material) would typically be sandwiched between the conductive element and an electrode. The structure additionally exhibits non-linear IV characteristics, which can be favorable in certain arrays.

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Liu, S.Q., et al., “Electro-pulse-induced reversible resistance change effect in magnetoresistive films”, Applied Physics Letters, vol. 76, No. 19, May 8, 2000, 2749-2651.
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Watanabe, Y. et al., “Current-driven insulator-conductor transition and nonvolatile memory in chromium-doped SrTiO3single crystals, Applied Physics Letters, vol. 78, No. 23, Jun. 4, 2001, 3738-3740.

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