Multi-resin material for an antireflection film to be formed on

Details Multi-resin material for an antireflection film to be formed on Multi-resin material for an antireflection film to be formed on

1998-04-03

2000-07-18

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Radiation sensitive composition or product or process of making

430512, G03C 176

Patent

active

060905239

ABSTRACT:
An antireflection film includes a base resin and an additive resin, the additive resin having a dry etching rate higher than that of the base resin. A photoresist pattern is formed and the antireflection film is selectively etched using the photoresist pattern as a mask. The molecular weight and weight percent of the additive resin are selected to provide an etching rate for the antireflection film that permits selective removal of the antireflection film while leaving an effective amount of the photoresist.

REFERENCES:
patent: 4910122 (1990-03-01), Arnold et al.
patent: 5597868 (1997-01-01), Kunz
patent: 5759755 (1998-06-01), Park et al.
patent: 5851738 (1998-12-01), Thackeray et al.
patent: 5891959 (1999-04-01), Kunz
Semiconductor World, "Antireflection Technique (Method of Application) For Control of Fluctuation of Dimension 0.3 .mu.m Precision of Litho. Dimension and Precision of Superposition", Jun. 1995, pp. 100-102.

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