Multi-purpose poly edge test structure

Details Multi-purpose poly edge test structure Multi-purpose poly edge test structure

2007-03-22

2008-10-21

Ho, Tu-Tu V (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Test or calibration structure

C257S529000, C257SE21523, C257SE23149

Reexamination Certificate

active

07439538

ABSTRACT:
A test structure in accordance with the present invention allows for testing of both VbdTDDB, and leakage current between adjacent gate features. The test structure comprises a plurality of parallel polysilicon gate structures overlying a substrate. Traces placing alternate gates in electrical communication with a polysilicon edge are connected by a fuse. In one embodiment, a potential difference is applied across all gates to trigger Vbd, and then the fuse is broken to allow individual probing of breakdown of the alternate groups of gates. In another embodiment, the fuse is broken and then force and sense voltages are applied to the edge polysilicon in communication with the alternate gate groupings, allowing detection of leakage current between the alternate groupings of gates that reveals the existence of an unwanted polysilicon extrusion or bridge.

REFERENCES:
patent: 6133054 (2000-10-01), Henson

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