Multi-port thin-film memory devices

Details Multi-port thin-film memory devices Multi-port thin-film memory devices

2008-07-14

2009-12-22

Tran, Anh Q (Department: 2819)

Electronic digital logic circuitry

Multifunctional or programmable

Array

C326S047000, C326S101000

Reexamination Certificate

active

07635988

ABSTRACT:
In a first aspect, a semiconductor storage device, comprising: a metal line coupled to a gate of an access transistor, wherein the gate material is deposited substantially above the metal line. In a second aspect, a semiconductor storage device, comprising: a first port to write data to a storage element; and a second port to read a signal generated by the storage element; and a first metal line coupled to a gate of an access transistor coupled to the first port; and a second metal line coupled to a gate of an access transistor coupled to the second port; wherein, the gates of said access transistors are formed on a gate material deposited substantially above the metal of first and second metal lines.

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