Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Configuration or pattern of bonds
Reexamination Certificate
2011-03-29
2011-03-29
Cao, Phat X (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Configuration or pattern of bonds
C257S784000, C257SE23070
Reexamination Certificate
active
07915745
ABSTRACT:
A multi-port memory device includes a first package ball out region in which a plurality of balls for a serial I/O interface part are arranged; and a second package ball out region in which a plurality of balls for a dynamic random access memory (DRAM) part are arranged.
REFERENCES:
patent: 2005/0007170 (2005-01-01), Nakahara et al.
Do Chang-Ho
Im Jae-Hyuk
Cao Phat X
Hynix / Semiconductor Inc.
IP & T Group LLP
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