Multi-port memory device

Details Multi-port memory device Multi-port memory device

2004-06-25

2008-11-11

Phung, Anh (Department: 2824)

Static information storage and retrieval

Read/write circuit

Having fuse element

C365S200000, C365S201000, C365S230080

Reexamination Certificate

active

07450459

ABSTRACT:
There is provided a column repair technology of a semiconductor memory device. The semiconductor memory device includes: a normal bus connection part for transmitting/receiving data between global data buses and local data buses of each bank; a redundant bus connection part for transmitting/receiving data between global data buses and local data buses of each bank; a fuse set having a physical position information of a fail column; and a switching part for selectively connecting outputs of the normal bus connection part and the redundant bus connection part to the global data buses, which corresponds to the fail column, in response to the physical position information of the fail column. The column redundancy scheme can be applied to semiconductor memory devices having such a structure that a lot of column selection lines are enabled with respect to one column address and can also be applied to a case when a fail column address is not present. Therefore, the redundancy efficiency can be improved and an increase of the chip area can be prevented.

REFERENCES:
patent: 6418066 (2002-07-01), Hidaka
patent: 7016255 (2006-03-01), Lee et al.
patent: 2001-0036463 (2001-05-01), None
patent: 10-0605573 (2006-07-01), None

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