Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2011-01-25
2011-01-25
Ngo, Ngan (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S295000, C257SE27048, C257SE29342, C257SE29343, C361S301400, C361S306300, C361S321200
Reexamination Certificate
active
07875956
ABSTRACT:
In accordance with the teachings described herein, a multi-level thin film capacitor on a ceramic substrate and method of manufacturing the same are provided. The multi-level thin film capacitor (MLC) may include at least one high permittivity dielectric layer between at least two electrode layers, the electrode layers being formed from a conductive thin film material. A buffer layer may be included between the ceramic substrate and the thin film MLC. The buffer layer may have a smooth surface with a surface roughness (Ra) less than or equal to 0.08 micrometers (um).
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Cervin-Lawry Andrew
Koutsaroff Ivoyl P.
Patel Atin J.
Vandermeulen Mark
Guntin Ed
Guntin Meles & Gust PLC
Liu Benjamin Tzu-Hung
Ngo Ngan
Paratek Microwave Inc.
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