Multi-level thin film capacitor on a ceramic substrate and...

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics

Reexamination Certificate

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Details

C257S295000, C257SE27048, C257SE29342, C257SE29343, C361S301400, C361S306300, C361S321200

Reexamination Certificate

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07875956

ABSTRACT:
In accordance with the teachings described herein, a multi-level thin film capacitor on a ceramic substrate and method of manufacturing the same are provided. The multi-level thin film capacitor (MLC) may include at least one high permittivity dielectric layer between at least two electrode layers, the electrode layers being formed from a conductive thin film material. A buffer layer may be included between the ceramic substrate and the thin film MLC. The buffer layer may have a smooth surface with a surface roughness (Ra) less than or equal to 0.08 micrometers (um).

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European Search Report dated Feb. 22, 2008.
Notice of Reasons for Rejection of related Japanese Application No. 2006-540124, dated Nov. 28, 2008, 7 pages.

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