Multi-level storage capacitor structure with improved memory den

Details Multi-level storage capacitor structure with improved memory den Multi-level storage capacitor structure with improved memory den

1996-10-17

1998-01-27

Fears, Terrell W.

Static information storage and retrieval

Systems using particular element

Capacitors

365 51, G11C 1124

Patent

active

057128138

ABSTRACT:
DRAM cells using a multi-level storage capacitor structure is disclosed. Since the storage capacitors of the present invention can extend to the adjacent cells, they can have a much larger surface area than those using a single-level stacked capacitor structure. As a result, constraints on the dielectric constant of the insulating materials can be greatly relaxed.

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