Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device
Patent
1984-03-16
1986-01-28
Bowers, Jr., Charles L.
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Making electrical device
430156, 430315, 430324, 430325, 430328, 430329, 430330, G03F 726
Patent
active
045671320
ABSTRACT:
A photoresist photolithographic process is disclosed which provides for a single development step to develop a dual layer photoresist for lift-off, reactive ion etching, or ion implantation processes requiring a precise aperture size at the top of the photoresist layer.
The process involves the deposition of two compositionally similar layers, with the first layer having the characteristic of being soluble in a developer after exposure to light and baking, and the second layer having the characteristic of being insoluble in the same developer after having been exposed to light and baked. With these two distinct characteristics for the two layers of photoresist, the effective aperture for windows in the composite photoresist can be tightly controlled in its cross-sectional dimension in the face of large variations in the developer concentration and development time.
REFERENCES:
patent: 2702243 (1955-02-01), Schmidt
patent: 3152900 (1964-10-01), Kaus et al.
patent: 4104070 (1978-08-01), Moritz et al.
patent: 4154613 (1979-05-01), Doering
patent: 4211834 (1980-07-01), Lapadula et al.
patent: 4238559 (1980-12-01), Feng et al.
patent: 4352870 (1982-10-01), Howard et al.
patent: 4373018 (1983-02-01), Reichmanis
Romankiw, L. T., et al., IBM Tech. Discl. Bulletin., vol. 18, No. 12, pp. 4219-4221, 5/1976.
Lin. B. J., et al., J. Vac. Sci. Tech. 19(4), 11-12/1981, pp. 1313-1319.
Griffing, B. F., J. Vac. Sci. Tech. 19(4), 11-12/1981, pp. 1423-1428.
Lin, B. J., IBM Tech. Discl. Bulletin, vol. 21, No. 5, 10/1978, p. 2133.
Horng, C. T. et al., IBM Tech. Discl. Bulletin, vol. 26, No. 3B, 8/1983, p. 1731.
Fredericks Edward C.
Greenhaus Herbert L.
Nanda Madan M.
Via Giorgio G.
Bowers Jr. Charles L.
Hoel John E.
International Business Machines - Corporation
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