Multi-level nonvolatile semiconductor memory device

Electrical computers and digital processing systems: memory – Storage accessing and control – Specific memory composition

Reexamination Certificate

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Details

C711S203000, C711SE12003

Reexamination Certificate

active

07941588

ABSTRACT:
A nonvolatile semiconductor device includes a first flash memory device; a second flash memory device in which data programming and/or reading is faster than in said first flash memory device; an address conversion table which correlates a logical address of a memory cell to a physical address designating said memory cell of said first and/or said second flash memory; an interface part which accepts an access request to a memory cell, an address conversion table search part which searches a physical address an access part which accesses a memory cell a counting part which counts the number of times a physical address has been accessed and generates an access count value of said physical address; a comparison part which compares whether said access count value of said physical address is more than a threshold or not; and a transmitting part which transmits data to said second flash memory device.

REFERENCES:
patent: 2005/0218460 (2005-10-01), Hasegawa et al.
patent: 2006/0274565 (2006-12-01), Takashima et al.
patent: 2008/0235467 (2008-09-01), Tagawa
patent: 2008/0244211 (2008-10-01), Ito
patent: 4-237344 (1992-08-01), None
patent: 2005-268621 (2005-09-01), None

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