Static information storage and retrieval – Systems using particular element – Amorphous
Reexamination Certificate
2011-05-17
2011-05-17
Nguyen, Tan T. (Department: 2827)
Static information storage and retrieval
Systems using particular element
Amorphous
C365S148000
Reexamination Certificate
active
07944740
ABSTRACT:
A phase change memory device and a method for programming the same. The method includes determining a characterized lowest SET current and corresponding SET resistance for the phase change memory device. The method includes determining a characterized RESET current slope for the phase change memory device. The method also includes calculating a first current amplitude for a RESET pulse based on the characterized lowest SET current and the characterized RESET current slope. The method includes applying the RESET pulse to a target memory cell in the phase change memory device and measuring the resistance of the target memory cell. If the measured resistance is substantially less than a target resistance, the method further includes applying one or more additional RESET pulses. In one embodiment of the invention, the one or more additional RESET pulses have current amplitudes greater than a previously applied RESET pulse.
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Lam Chung H.
Lee Ming-Hsiu
Nirschi Thomas
Rajendran Bipin
Alexanian Vazken
International Business Machines - Corporation
Nguyen Tan T.
Tuchman Ido
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