Multi-layered structure forming method, method of...

Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate

Reexamination Certificate

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C438S795000, C257S921000, C257SE21333

Reexamination Certificate

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11201100

ABSTRACT:
There is provided a multi-layered structure forming method comprising: (A) forming a first insulating material layer containing a first photo-curing material on a substrate; (B) semi-hardening the first insulating material layer by radiating light having a first wavelength to the first insulating material layer; (C) forming a conductive material layer on the semi-hardened first insulating material layer by ejecting droplets of a conductive material to the semi-hardened first insulating material layer from a nozzle of a liquid droplet ejecting apparatus; (D) forming a second insulating material layer containing a second photo-curing material so as to cover the semi-hardened first insulating material layer and the conductive material layer; and (E) forming a first insulating layer, a conductive layer positioned on the first insulating material, and a second insulating layer covering the first insulating layer and the conductive layer by simultaneously heating the first insulating material layer, the conductive material layer, and the second insulating material layer.

REFERENCES:
patent: 2003/0213614 (2003-11-01), Furusawa et al.
patent: 2004-006578 (2004-01-01), None

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