Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2007-07-31
2007-07-31
Hoang, Quoc (Department: 2818)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S795000, C257S921000, C257SE21333
Reexamination Certificate
active
11201100
ABSTRACT:
There is provided a multi-layered structure forming method comprising: (A) forming a first insulating material layer containing a first photo-curing material on a substrate; (B) semi-hardening the first insulating material layer by radiating light having a first wavelength to the first insulating material layer; (C) forming a conductive material layer on the semi-hardened first insulating material layer by ejecting droplets of a conductive material to the semi-hardened first insulating material layer from a nozzle of a liquid droplet ejecting apparatus; (D) forming a second insulating material layer containing a second photo-curing material so as to cover the semi-hardened first insulating material layer and the conductive material layer; and (E) forming a first insulating layer, a conductive layer positioned on the first insulating material, and a second insulating layer covering the first insulating layer and the conductive layer by simultaneously heating the first insulating material layer, the conductive material layer, and the second insulating material layer.
REFERENCES:
patent: 2003/0213614 (2003-11-01), Furusawa et al.
patent: 2004-006578 (2004-01-01), None
Mikoshiba Toshiaki
Sakurada Kazuaki
Shintate Tsuyoshi
Wada Kenji
Yamada Jun
Hoang Quoc
Oliff & Berridg,e PLC
Seiko Epson Corporation
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