Multi-layered semiconductor device and method for producing...

Details Multi-layered semiconductor device and method for producing... Multi-layered semiconductor device and method for producing...

2005-02-01

2005-02-01

Lee, Eddie (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Beam leads

C257S736000

Reexamination Certificate

active

06849945

ABSTRACT:
To minimize a size of a semiconductor device and reduce a thickness thereof as well as improve the yield and lower the production cost in the production of a semiconductor package, a multi-layered semiconductor device is provided, wherein a film-like semiconductor package (10) incorporating therein a semiconductor chip (12) is disposed in a package accommodation opening (11a) of a circuit pattern layer to form a circuit board. A plurality of such circuit boards are layered together to electrically connect circuit patterns (13) of the circuit boards with each other via a low melting point metal (14) or lead beam bonding (13b).

REFERENCES:
patent: 3672034 (1972-06-01), Clark
patent: 5128831 (1992-07-01), Fox et al.
patent: 5324687 (1994-06-01), Wojnarowski
patent: 5334875 (1994-08-01), Sugano et al.
patent: 5440171 (1995-08-01), Miyano et al.
patent: 6239496 (2001-05-01), Asada
patent: 6303997 (2001-10-01), Lee
patent: 6335565 (2002-01-01), Miyamoto et al.
patent: 6469374 (2002-10-01), Imoto
patent: 6472734 (2002-10-01), Arakawa et al.
patent: 6564454 (2003-05-01), Glenn et al.
patent: 20010001989 (2001-05-01), Smith
patent: 20020149097 (2002-10-01), Lee et al.
patent: 0 413 542 (1991-02-01), None
patent: WO 99 57765 (1999-11-01), None

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