Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-03-08
2011-03-08
Such, Matthew W (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257SE21168
Reexamination Certificate
active
07902065
ABSTRACT:
A multi-layered metal line of a semiconductor device and a process of forming the same are described. The multi-layered metal line includes a lower metal line formed on a semiconductor substrate. An insulation layer is subsequently formed on the semiconductor substrate including the lower metal line and has an upper metal line forming region that exposes a portion of the lower metal line. A diffusion barrier formed on a surface of the upper metal line forming region of the insulation layer. The diffusion barrier includes a W—B—N ternary layer. An upper metal line is finally formed on the diffusion barrier to fill the upper metal line forming region of the insulation layer.
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Jung Dong Ha
Kim Baek Mann
Kim Jeong Tae
Lee Young Jin
Yeom Seung Jin
Hynix / Semiconductor Inc.
Ladas & Parry LLP
Naraghi Ali
Such Matthew W
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