Multi-layer susceptor for rapid thermal process reactors

Details Multi-layer susceptor for rapid thermal process reactors Multi-layer susceptor for rapid thermal process reactors

1995-05-30

1996-12-03

Breneman, R. Bruce

Coating apparatus

Gas or vapor deposition

Work support

118500, 118729, C23C 1600

Patent

active

055803881

ABSTRACT:
A multi layer RTP reactor susceptor includes a first layer which has a multiplicity of thin components that are preferably silicon carbide, graphite, or silicon carbide coated graphite with a thickness less than about 6 mm, with an emissivity such that the first layer radiates heat, and with thermal heat transfer characteristics such that the first layer facilitates maintaining a substrate or substrates supported by the susceptor at a uniform temperature, and facilitates maintaining uniform process gas characteristics over the substrates. A second layer of the susceptor is transparent to the heat source of the RTP reactor and provides a rigid, stable platform for the first layer.

REFERENCES:
patent: 3783822 (1974-01-01), Wollam
patent: 3836751 (1974-09-01), Anderson
patent: 3862397 (1975-01-01), Anderson
patent: 3916822 (1975-11-01), Robinson
patent: 4047496 (1977-09-01), McNeilly
patent: 4081313 (1978-03-01), McNeilly et al.
patent: 4101759 (1978-07-01), Anthony et al.
patent: 4113547 (1978-09-01), Katz
patent: 4493977 (1985-01-01), Arai et al.
patent: 4497683 (1985-02-01), Celler et al.
patent: 4511788 (1985-04-01), Arai et al.
patent: 4533820 (1985-08-01), Shimizu
patent: 4540876 (1985-09-01), McGinty
patent: 4545327 (1985-10-01), Cambell
patent: 4550245 (1985-10-01), Arai et al.
patent: 4649261 (1987-03-01), Sheets
patent: 4680451 (1987-07-01), Gat et al.
patent: 4755654 (1988-07-01), Crowley
patent: 4789771 (1988-12-01), Robinson et al.
patent: 4796562 (1989-01-01), Brors
patent: 4798165 (1989-01-01), deBoer et al.
patent: 4821674 (1989-04-01), deBoer et al.
patent: 4823735 (1989-04-01), Pichel
patent: 4828224 (1989-05-01), Crabb et al.
patent: 4836138 (1989-06-01), Robinson et al.
patent: 4851358 (1989-07-01), Huber
patent: 4857689 (1989-08-01), Lee
patent: 4920918 (1990-05-01), Adams et al.
patent: 4924807 (1990-05-01), Nakayama
patent: 4951601 (1990-08-01), Maydan et al.
patent: 4978567 (1990-12-01), Miller
patent: 4986838 (1991-01-01), Johnsgard
patent: 4989540 (1991-02-01), Fuse
patent: 5000113 (1991-03-01), Wang
patent: 5034199 (1991-07-01), Zavracky
patent: 5044943 (1991-09-01), Bowman
patent: 5053247 (1991-10-01), Moore
patent: 5074017 (1991-12-01), Toya
patent: 5077875 (1992-01-01), Hoke
patent: 5098198 (1992-03-01), Nulman et al.
patent: 5104276 (1992-04-01), Severns et al.
patent: 5106200 (1992-04-01), Hosokawa
patent: 5108792 (1992-04-01), Anderson
patent: 5169684 (1992-12-01), Takagi
patent: 5192371 (1993-03-01), Shuto
patent: 5228501 (1993-07-01), Tepman
patent: 5252807 (1993-10-01), Chizinsky
patent: 5334257 (1994-08-01), Nishi
patent: 5366002 (1994-11-01), Tepman
patent: 5387557 (1995-02-01), Takagi
patent: 5439850 (1995-08-01), Ozturk
patent: 5444217 (1995-08-01), Moore
J. G. Kren, Technique to Deposit Thick Films Without Warping or Breaking Wafers, 5165, IBM Technical Disclosures Bulletin vol. 7 No. 12 p. 1119.
Edited by B. J. Baliga, "Epitaxial Silicon Technology," Academic Press, Inc., 1986, pp. 56-67.

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