Multi-layer structure for II-VI group compound semiconductor and

Details Multi-layer structure for II-VI group compound semiconductor and Multi-layer structure for II-VI group compound semiconductor and

1997-01-31

1999-02-23

Bowers, Charles

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

438478, 438503, 438507, H01L 2120

Patent

active

058743499

ABSTRACT:
In a method of forming a II-VI compound semiconductor thin film on an InP substrate, a layer of III-V compound semiconductor mixed crystal is first formed on the InP substrate. The desorption rate of a group V element constituting the III-V compound semiconductor mixed crystal at a decomposition temperature of a native oxide layer formed on a surface of the III-V compound semiconductor mixed crystal layer is lower than a desorption rate of P of the InP substrate at a decomposition temperature of a native oxide layer formed on a surface of the InP substrate. A II-VI compound semiconductor thin film layer is formed on the first III-V compound semiconductor mixed crystal layer.

REFERENCES:
T. Morita et al.; "Molecular Beam Epitaxial Growth of MgZnCdSe on (100) InP Substrates"; Sophia University, Dept. of Electrical and Electronics Engineering pp. 805-808.
N. Kobayashi et al.; "As and P Desorption from III-V Semiconductor Surface in Metalorganic Chemical Vapor Deposition Studied by Surface Photo-Absorption"; Japanese Journal of Applied Physics, vol. 30, No. 10A, Oct. 1991, (1991), pp. L1699-L1701.
J.W. Matthews et al.; "Defects in Epitaxial Multilayers"; Journal of Crystal Growth, vol. 27 (1974), pp. 118-125.
K. Lu, J.L. House, P.A. Fisher, C.A. Coronado, E. Ho, G.S. Petrich, L.A. Kolodziejski, "(In,Ga)P Buffer Layers for ZnSe-Based Visible Emitters", J. Crystal Growth, 138, 1-7, 1994.
Naoki Kobayashi and Yasuyuki Kobayashi, As and P Desorption from III-V Semiconductor Surface in Metalorganic Chemical Vapor Deposition Studied by Surface Photo-Absorption, Jap. J. Appl. Phys., vol. 30, No. 10A, 1699-1701, Oct. 1991.
Yuji Hishida, Tomoyuki Yoshie, Katsumi Yagi Takao Yamaguchi and Tatsuhiko Niina, "Reduction of p-AnSe/p-GaAs non-ohmic Barrier by Inserting a GaN Buffer Layer", J. Crystal Growth, 150, 828-832, 1995.

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