Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-02-16
2009-06-09
Ngo, Ngan (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S200000, C257S616000, C257SE21092, C257SE21102, C257SE21182
Reexamination Certificate
active
07544997
ABSTRACT:
A method for forming a semiconductor device includes forming a recess in a source region and a recess in a drain region of the semiconductor device. The method further includes forming a first semiconductor material layer in the recess in the source region and a second semiconductor material layer in the recess in the drain region, wherein each of the first semiconductor material layer and the second semiconductor material layer are formed using a stressor material having a first ratio of an atomic concentration of a first element and an atomic concentration of a second element, wherein the first element is silicon and a first level of concentration of a doping material. The method further includes forming additional semiconductor material layers overlying the first semiconductor material layer and the second semiconductor material layer that have a different ratio of the atomic concentration of the first element and the second element.
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patent: 2006/0065914 (2006-03-01), Chen et al.
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PCT Search report and Written Opinion for corresponding PCT Application No. PCT/US08/51841 mailed May 29, 2008.
Dhandapani Veeraraghavan
Goedeke Darren V.
Hildreth Jill C.
Zhang Da
Clingan, Jr. James L.
Freescale Semiconductor Inc.
Liu Benjamin Tzu-Hung
Ngo Ngan
Singh Ranjeev K.
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