Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-09-21
2000-08-08
Hardy, David
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
438154, 438152, H01L 2184, H01L 310392
Patent
active
061005665
ABSTRACT:
A multi-layer semiconductor having a semiconductor substrate, a first gate electrode formed over the substrate, first source and drain electrodes in the substrate on both sides of first and second gate electrodes, the second source and drain electrodes connected to the semiconductor layer. The method includes the steps of forming the first gate electrode over the semiconductor substrate with a first insulating layer inbetween, forming the first source and the first drain electrodes in the substrate on both sides of the first gate electrodes, forming a semiconductor layer over the first gate electrode with a second insulating layer therebetween, forming a second gate electrode on the semiconductor layer, and forming second source, and drain electrodes connected to the semiconductor layer.
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Hardy David
LG Semicon Co. Ltd.
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